Ex-situ control of fine-structure splitting and excitonic binding energies in single InAs/GaAs quantum dots

Details Ex-situ control of fine-structure splitting and excitonic binding energies in single InAs/GaAs quantum dots Ex-situ control of fine-structure splitting and excitonic binding energies in single InAs/GaAs quantum dots

2006-10-17

arxiv.org/abs/cond-mat/0610479v1

AIP Conf. Proc. 893, 919 (2006)

Physics

Condensed Matter

Materials Science

2 pages, 2 figures, Proceedings of the ICPS-28, Vienna, Austria 2006

Scientific paper

10.1063/1.2730192

A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. We are able to record single QD cathodoluminescence spectra and trace the evolution of one and the same QD over several steps of annealing. A systematic reduction of the excitonic fine-structure splitting is reported. In addition the binding energies of different excitonic complexes change dramatically. The results are interpreted in terms of a change of electron and hole wavefunction shape and mutual position.

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