Evolution of electronic structure of doped Mott insulators - reconstruction of poles and zeros of Green's function

Details Evolution of electronic structure of doped Mott insulators - reconstruction of poles and zeros of Green's function Evolution of electronic structure of doped Mott insulators - reconstruction of poles and zeros of Green's function

2008-09-05

arxiv.org/abs/0809.0950v1

Phys. Rev. Lett. 102, 056404 (2009)

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.102.056404

We study evolution of metals from Mott insulators in the carrier-doped 2D Hubbard model using a cluster extension of the dynamical mean-field theory. While the conventional metal is simply characterized by the Fermi surface (pole of the Green function G), interference of the zero surfaces of G with the pole surfaces becomes crucial in the doped Mott insulators. Mutually interfering pole and zero surfaces are dramatically transferred over the Mott gap, when lightly doped holes synergetically loosen the doublon-holon binding. The heart of the Mott physics such as the pseudogap, hole pockets, Fermi arcs, in-gap states, and Lifshitz transitions appears as natural consequences of this global interference in the frequency space.

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