Evidence of a pressure-induced metallization process in monoclinic VO$_2$

Details Evidence of a pressure-induced metallization process in monoclinic VO$_2$ Evidence of a pressure-induced metallization process in monoclinic VO$_2$

2006-11-10

arxiv.org/abs/cond-mat/0611281v1

Phys. Rev. Lett. 98, 196406 (2007)

Physics

Condensed Matter

Materials Science

5 pages, 3 figures

Scientific paper

10.1103/PhysRevLett.98.196406

Raman and combined trasmission and reflectivity mid infrared measurements have been carried out on monoclinic VO$_2$ at room temperature over the 0-19 GPa and 0-14 GPa pressure ranges, respectively. The pressure dependence obtained for both lattice dynamics and optical gap shows a remarkable stability of the system up to P*$\sim$10 GPa. Evidence of subtle modifications of V ion arrangements within the monoclinic lattice together with the onset of a metallization process via band gap filling are observed for P$>$P*. Differently from ambient pressure, where the VO$_2$ metal phase is found only in conjunction with the rutile structure above 340 K, a new room temperature metallic phase coupled to a monoclinic structure appears accessible in the high pressure regime, thus opening to new important queries on the physics of VO$_2$.

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