Evidence for Carrier-Induced High-Tc Ferromagnetism in Mn-doped GaN film

Details Evidence for Carrier-Induced High-Tc Ferromagnetism in Mn-doped GaN film Evidence for Carrier-Induced High-Tc Ferromagnetism in Mn-doped GaN film

2006-04-28

arxiv.org/abs/cond-mat/0604647v1

Physics

Condensed Matter

Strongly Correlated Electrons

9 pages, 3 figures

Scientific paper

10.1209/0295-5075/78/37006

A GaN film doped with 8.2 % Mn was grown by the molecular-beam-epitaxy technique. Magnetization measurements show that this highly Mn-doped GaN film exhibits ferromagnetism above room temperature. It is also revealed that the high-temperature ferromagnetic state is significantly suppressed below 10 K, accompanied by an increase of the electrical resistivity with decreasing temperature. This observation clearly demonstrates a close relation between the ferromagnetism with extremely high-Tc and the carrier transport in the Mn-doped GaN film.

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