Etching of Graphene Devices with a Helium Ion Beam

Details Etching of Graphene Devices with a Helium Ion Beam Etching of Graphene Devices with a Helium Ion Beam

2009-05-27

arxiv.org/abs/0905.4409v2

ACSNano 3, 2674 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1021/nn900744z

We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions in a graphene device, as demonstrated by etching a channel in a suspended graphene device with etched gaps down to about 10 nm. Graphene devices on silicon dioxide (SiO2) substrates etch with lower He ion doses and are found to have a residual conductivity after etching, which we attribute to contamination by hydrocarbons.

Affiliated with

Also associated with

No associations

Rating

Etching of Graphene Devices with a Helium Ion Beam does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Etching of Graphene Devices with a Helium Ion Beam, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etching of Graphene Devices with a Helium Ion Beam will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-527689