Etching-dependent reproducible memory switching in vertical SiO2 structures

Details Etching-dependent reproducible memory switching in vertical SiO2 structures Etching-dependent reproducible memory switching in vertical SiO2 structures

2008-11-25

arxiv.org/abs/0811.4099v1

Appl. Phys. Lett. 93, 253101 (2009)

Physics

Condensed Matter

Materials Science

6 pages, 3 figures + 2 suppl. figures

Scientific paper

10.1063/1.3045951

Vertical structures of SiO$_{2}$ sandwiched between a top tungsten electrode and conducting non-metal substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which short voltage pulses (1 $\mu$s) can switch the devices between high- and low-impedance states. Through the comparison of current-voltage characteristics in structures made by different methods, filamentary conduction at the etched oxide edges is most consistent with the results, providing insights into similar behaviors in metal/SiO/metal systems. High ON/OFF ratios of over 10$^{4}$ were demonstrated.

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