Physics – Condensed Matter – Materials Science
Scientific paper
2011-10-25
Journal of The Electrochemical Society, 158, H715-H723, 2011
Physics
Condensed Matter
Materials Science
Scientific paper
10.1149/1.3585777
The chemical changes of Ti/Er/n-Si(100) stacks evaporated in high vacuum and grown ex situ by rapid thermal annealing were scrutinized. The emphasis was laid on the evolution with the annealing temperature of (i) the Er-Si solid-state reaction and (ii) the penetration of oxygen into Ti and its subsequent interaction with Er. For that sake, three categories of specimens were analyzed: as-deposited, annealed at 300{\deg}C, and annealed at 600{\deg}C. It was found that the presence of residual oxygen into the annealing atmosphere resulted in a substantial oxidation of the Er film surface, irrespective of the annealing temperature. However, the part of the Er film in intimate contact with the Si bulk formed a silicide (amorphous at 300{\deg}C and crystalline at 600{\deg}C) invariably free of oxygen, as testified by x-ray photoelectron spectroscopy depth profiling and Schottky barrier height extraction of 0.3 eV at 600{\deg}C. This proves that, even if Er is highly sensitive to oxygen contamination, the formation of low Schottky barrier Er silicide contacts on n-Si is quite robust. Finally, the production of stripped oxygen-free Er silicide was demonstrated after process optimization.
Dubois Emmanuel
Dutu Constantin Augustin
Godey Sylvie
Laszcz Adam
Raskin Jean-Pierre
No associations
LandOfFree
Erbium Silicide Growth in the Presence of Residual Oxygen does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Erbium Silicide Growth in the Presence of Residual Oxygen, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Erbium Silicide Growth in the Presence of Residual Oxygen will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-94616