Epitaxy and magnetotransport of Sr_2FeMoO_6 thin films

Details Epitaxy and magnetotransport of Sr_2FeMoO_6 thin films Epitaxy and magnetotransport of Sr_2FeMoO_6 thin films

2000-01-27

arxiv.org/abs/cond-mat/0001398v1

Physics

Condensed Matter

Materials Science

Institute of Physics, University of Mainz, Germany, 4 pages, including 5 pictures and 1 Table, submitted to Phys. Rev. B

Scientific paper

10.1103/PhysRevB.62.R767

By pulsed-laser deposition epitaxial thin films of Sr_2FeMoO_6 have been pre- pared on (100) SrTiO_3 substrates. Already for a deposition temperature of 320 C epitaxial growth is achieved. Depending on deposition parameters the films show metallic or semiconducting behavior. At high (low) deposition temperature the Fe,Mo sublattice has a rock-salt (random) structure. The metallic samples have a large negative magnetoresistance which peaks at the Curie temperature. The magnetic moment was determined to 4 mu_B per formula unit (f.u.), in agreement with the expected value for an ideal ferrimagnetic arrangement. We found an ordinary Hall coefficient of -6.01x10^{-10} m^3/As at 300 K, corresponding to an electronlike charge-carrier density of 1.3 per Fe,Mo-pair. In the semiconducting films the magnetic moment is reduced to 1 mu_B/f.u. due to disorder in the Fe,Mo sublattice. In low fields an anomalous holelike contribution dominates the Hall voltage, which vanishes at low temperatures for the metallic films only.

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