Epitaxy and Magneto-transport properties of the diluted magnetic semiconductor p- Be(1-x)MnxTe

Details Epitaxy and Magneto-transport properties of the diluted magnetic semiconductor p- Be(1-x)MnxTe Epitaxy and Magneto-transport properties of the diluted magnetic semiconductor p- Be(1-x)MnxTe

2001-07-31

arxiv.org/abs/cond-mat/0107619v1

Physics

Condensed Matter

Materials Science

pdf only

Scientific paper

10.1063/1.1416160

We report on the MBE-growth and magnetotransport properties of p-type BeMnTe, a new ferromagnetic diluted magnetic semiconductor. BeMnTe thin film structures can be grown almost lattice matched to GaAs for Mn concentrations up to 10% using solid source MBE. A high p-type doping with nitrogen can be achieved by using an RF-plasma source. BeMnTe and BeTe layers have been characterized by magneto-transport measurements. At low temperatures, the BeMnTe samples exhibit a large anomalous Hall effect. A hysteresis in the anomalous Hall effect appears below 2.5K in the most heavily doped sample, which indicates the occurrence of a ferromagnetic phase.

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