Epitaxial Thin Films of the Giant-Dielectric-Constant Material CaCu_3Ti_4O_{12} Grown by Pulsed-laser Deposition

Details Epitaxial Thin Films of the Giant-Dielectric-Constant Material CaCu_3Ti_4O_{12} Grown by Pulsed-laser Deposition Epitaxial Thin Films of the Giant-Dielectric-Constant Material CaCu_3Ti_4O_{12} Grown by Pulsed-laser Deposition

2002-05-08

arxiv.org/abs/cond-mat/0205153v1

Physics

Condensed Matter

Materials Science

11 pages, 4 figures

Scientific paper

10.1063/1.1506951

Pulsed-laser deposition has been used to grow epitaxial thin films of the giant-dielectric-constant material CaCu_3Ti_4O_{12} on LaAlO_3 and SrTiO_3 substrates with or without various conducting buffer layers. The latter include YBa_2Cu_3O_7, La_{1.85}Sr_{0.15}CuO_{4+\delta} and LaNiO_3. Above 100K - 150K the thin films have a temperature independent dielectric constant as do single crystals. The value of the dielectric constant is of the order of 1500 over a wide temperature region, potentially making it a good candidate for many applications. The frequency dependence of its dielectric properties below 100K - 150K indicates an activated relaxation process.

Affiliated with

Also associated with

No associations

Rating

Epitaxial Thin Films of the Giant-Dielectric-Constant Material CaCu_3Ti_4O_{12} Grown by Pulsed-laser Deposition does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Epitaxial Thin Films of the Giant-Dielectric-Constant Material CaCu_3Ti_4O_{12} Grown by Pulsed-laser Deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Epitaxial Thin Films of the Giant-Dielectric-Constant Material CaCu_3Ti_4O_{12} Grown by Pulsed-laser Deposition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-504557