Epitaxial LaFeAsOF thin films grown by pulsed laser deposition

Details Epitaxial LaFeAsOF thin films grown by pulsed laser deposition Epitaxial LaFeAsOF thin films grown by pulsed laser deposition

2009-09-21

arxiv.org/abs/0909.3788v1

Supercond.Sci.Technol 23 (2010) 022002

Physics

Condensed Matter

Superconductivity

6 pages, 4 Figures

Scientific paper

Superconducting and epitaxially grown LaFeAsOF thin films were successfully prepared on (001)-oriented LaAlO3 substrates using pulsed laser deposition. The prepared thin films show exclusively a single in-plane orientation with epitaxial relation (001)[100] parallel to (001)[100] and a FWHM value of 1deg. Furthermore, resistive measurement of the superconducting transition temperature revealed a Tc90 of 25K with a high residual resistive ratio of 6.8. The applied preparation technique, standard thin film pulsed laser deposition at room temperature in combination with a subsequent post annealing process, is suitable for fabrication of high quality LaFeAsO1-xFx thin films. A high upper critical field of 76.2 T was evaluated for magnetic fields applied perpendicular to the c-axis and the anisotropy was calculated to be 3.3 assuming single band superconductivity.

Affiliated with

Also associated with

No associations

Rating

Epitaxial LaFeAsOF thin films grown by pulsed laser deposition does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Epitaxial LaFeAsOF thin films grown by pulsed laser deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Epitaxial LaFeAsOF thin films grown by pulsed laser deposition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-432951