Physics – Condensed Matter – Materials Science
Scientific paper
2010-04-30
Physics
Condensed Matter
Materials Science
Scientific paper
A major challenge for the next generation of spintronics devices is the implementation of ferromagnetic-semiconductor thin films as spin injectors and detectors. Spin-polarised carrier injection cannot be accomplished efficiently from metals, and coupled with the rarity of intrinsic ferromagnetic semiconductors this has driven intensive study of diluted magnetic semiconductors. Chief among these is the doped III-V compound (Ga,Mn)As. These materials suffer from a number of drawbacks; they (i) require magnetic-ion doping well above the solubility limit, and (ii) must be hole doped to above the degenerate limit, preventing independent control of the carrier concentration and charge sign. Here we demonstrate the first epitaxial growth of a recently-characterised intrinsic ferromagnetic semiconductor, GdN, on silicon substrates, providing an essential step on the way to integrate new spintronics functionalities into Si-based technology. The films have been characterised as regards their growth toward fully relaxed GdN, the density and mobility of their carriers, and their magnetic behaviour.
Hirsch Lionel
Natali Francesca
Plank N. O. V.
Ruck B. J.
Semond Fabrice
No associations
LandOfFree
Epitaxial integration of the intrinsic ferromagnetic semiconductor GdN with silicon technology does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Epitaxial integration of the intrinsic ferromagnetic semiconductor GdN with silicon technology, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Epitaxial integration of the intrinsic ferromagnetic semiconductor GdN with silicon technology will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-387002