Epitaxial graphene transistors on SiC substrates

Details Epitaxial graphene transistors on SiC substrates Epitaxial graphene transistors on SiC substrates

2008-01-17

arxiv.org/abs/0801.2744v1

IEEE /Transactions on Electron Devices 55, 2078 (2008).

Physics

Condensed Matter

Materials Science

Scientific paper

10.1109/TED.2008.926593

This paper describes the behavior of top gated transistors fabricated using carbon, particularly epitaxial graphene on SiC, as the active material. In the past decade research has identified carbon-based electronics as a possible alternative to silicon-based electronics. This enthusiasm was spurred by high carbon nanotube carrier mobilities. However, nanotube production, placement, and control are all serious issues. Graphene, a thin sheet of graphitic carbon, can overcome some of these problems and therefore is a promising new electronic material. Although graphene devices have been built before, in this work we provide the first demonstration and systematic evaluation of arrays of a large number of transistors entirely produced using standard microelectronics methods. Graphene devices presented feature high-k dielectric, mobilities up to 5000 cm2/Vs and, Ion/Ioff ratios of up to 7, and are methodically analyzed to provide insight into the substrate properties. Typical of graphene, these micron-scale devices have negligible band gaps and therefore large leakage currents.

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