Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films on sapphire

Details Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films on sapphire Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films on sapphire

2011-03-16

arxiv.org/abs/1103.3288v1

Physics

Condensed Matter

Materials Science

To appear in Appl. Phys. Lett

Scientific paper

Uniform single layer graphene was grown on single-crystal Ir films a few nanometers thick which were prepared by pulsed laser deposition on sapphire wafers. These graphene layers have a single crystallographic orientation and a very low density of defects, as shown by diffraction, scanning tunnelling microscopy, and Raman spectroscopy. Their structural quality is as high as that of graphene produced on Ir bulk single crystals, i.e. much higher than on metal thin films used so far.

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