Epitaxial aluminium-nitride tunnel barriers grown by nitridation with a plasma source

Details Epitaxial aluminium-nitride tunnel barriers grown by nitridation with a plasma source Epitaxial aluminium-nitride tunnel barriers grown by nitridation with a plasma source

2007-11-14

arxiv.org/abs/0711.2221v1

Appl. Phys. Lett. 91, 233102 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 3 figures, accepted for publication in APL

Scientific paper

10.1063/1.2819532

High critical current-density (10 to 420 kA/cm^2) superconductor-insulator-superconductor tunnel junctions with aluminium nitride barriers have been realized using a remote nitrogen plasma from an inductively coupled plasma source operated in a pressure range of 10^{-3} to 10^{-1} mbar. We find a much better reproducibility and control compared to previous work. From the current-voltage characteristics and cross-sectional TEM images it is inferred that, compared to the commonly used AlO_x barriers, the poly-crystalline AlN barriers are much more uniform in transmissivity, leading to a better quality at high critical current-densities.

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