Physics – Condensed Matter – Materials Science
Scientific paper
2008-10-27
Physics
Condensed Matter
Materials Science
Scientific paper
10.1103/PhysRevLett.102.036601
We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $\Delta V$ at the interface as high as 1.2mV for a current density of 0.34 nA.$\mu m^{-2}$. This represents a dramatic increase of the spin accumulation signal, well above the theoretical predictions for spin injection through a ferromagnet/semiconductor interface. Such an enhancement is consistent with a sequential tunneling process via localized states located in the vicinity of the Al$_2$O$_3$/GaAs interface. For spin-polarized carriers these states act as an accumulation layer where the spin lifetime is large. A model taking into account the spin lifetime and the escape tunneling time for carriers travelling back into the ferromagnetic contact reproduces accurately the experimental results.
Deranlot Cyrile
Fert Albert
George Jean-Marie
Jaffrès Henri
Lemaître Aristide
No associations
LandOfFree
Enhancement of the Spin Accumulation at the Interface Between a Spin-Polarized Tunnel Junction and a Semiconductor does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Enhancement of the Spin Accumulation at the Interface Between a Spin-Polarized Tunnel Junction and a Semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Enhancement of the Spin Accumulation at the Interface Between a Spin-Polarized Tunnel Junction and a Semiconductor will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-323742