Enhancement of optical switching parameter and third-order optical nonlinearities in embedded Si nanocrystals: a theoretical assessment

Details Enhancement of optical switching parameter and third-order optical nonlinearities in embedded Si nanocrystals: a theoretical assessment Enhancement of optical switching parameter and third-order optical nonlinearities in embedded Si nanocrystals: a theoretical assessment

2008-04-16

arxiv.org/abs/0804.2581v1

Physics

Condensed Matter

Materials Science

8 pages, 3 figures, to be published in Optics Communications

Scientific paper

Third-order bound-charge electronic nonlinearities of Si nanocrystals (NCs) embedded in a wide band-gap matrix representing silica are theoretically studied using an atomistic pseudopotential approach. Nonlinear refractive index, two-photon absorption and optical switching parameter are examined from small clusters to NCs up to a size of 3 nm. Compared to bulk values, Si NCs show higher third-order optical nonlinearities and much wider two-photon absorption threshold which gives rise to enhancement in the optical switching parameter.

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