Enhancement of electronic inhomogeneities due to out-of-plane disorder in Bi_2Sr_2CuO_{6+delta} superconductors observed by scanning tunneling spectroscopy

Details Enhancement of electronic inhomogeneities due to out-of-plane disorder in Bi_2Sr_2CuO_{6+delta} superconductors observed by scanning tunneling spectroscopy Enhancement of electronic inhomogeneities due to out-of-plane disorder in Bi_2Sr_2CuO_{6+delta} superconductors observed by scanning tunneling spectroscopy

2006-09-15

arxiv.org/abs/cond-mat/0609362v1

Phys. Rev. B 74, 094503 (2006)

Physics

Condensed Matter

Superconductivity

5 pages, 4 figures; to be published in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.74.094503

Nanoscale electronic inhomogeneity in optimally doped single-layer Bi_2Sr_{1.6}L_{0.4}CuO_{6+delta}, (L-Bi2201, L=La and Gd) as well as bilayer Bi_2Sr_2CaCu_2O_{8+delta} (Bi2212), superconductors has been investigated by the low-temperature scanning-tunneling-microscopy and spectroscopy. The inhomogeneous gap structures are observed above and below Tc on Gd-Bi2201. Increasing the out-of-plane disorder which is controlled by mismatch of the ionic radius between Sr and Ln results in the enhancement of pseudogap region with suppressed coherence peaks in the conductance spectrum, making the gap average larger and the gap distribution wider. The degree of electronic inhomogeneity measured by the distribution width of the gap amplitude is shown to have a correlation with Tc in optimally doped Bi2201 and Bi2212.

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