Physics – Condensed Matter – Materials Science
Scientific paper
2003-05-02
Physics
Condensed Matter
Materials Science
12 pages, 3 figures
Scientific paper
10.1063/1.1628815
The effect of modulation doping by Be on the ferromagnetic properties of Ga(1-x)Mn(x)As is investigated in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As heterojunctions and quantum wells. Introducing Be acceptors into the Ga(1-y)Al(y)As barriers leads to an increase of the Curie temperature T_C of Ga(1-x)Mn(x)As, from 70 K in undoped structures to over 100 K with the modulation doping. This increase is qualitatively consistent with a multi-band mean field theory simulation of carrier-mediated ferromagnetism. An important feature is that the increase of T_C occurs only in those structures where the modulation doping is introduced after the deposition of the magnetic layer, but not when the Be-doped layer is grown first. This behavior is expected from the strong sensitivity of Mn interstitial formation to the value of the Fermi energy during growth.
Dobrowolska Malgorzata
Furdyna Jacek K.
Lim Weng Lee
Liu Xiandong
Meyer Jerry R.
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