Enhancement mode double top gated MOS nanostructures with tunable lateral geometry

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

11 pages, 6 figures, 3 tables, accepted for publication in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.80.115331

We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of parasitic dot formation is exhibited in several MOS quantum dots with an open lateral quantum dot geometry. Decreases in mobility and increases in charge defect densities (i.e. interface traps and fixed oxide charge) are measured for critical process steps, and we correlate low disorder behavior with a quantitative defect density. This work provides quantitative guidance that has not been previously established about defect densities for which Si quantum dots do not exhibit parasitic dot formation. These devices make use of a double-layer gate stack in which many regions, including the critical gate oxide, were fabricated in a fully-qualified CMOS facility.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Enhancement mode double top gated MOS nanostructures with tunable lateral geometry does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Enhancement mode double top gated MOS nanostructures with tunable lateral geometry, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Enhancement mode double top gated MOS nanostructures with tunable lateral geometry will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-13161

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.