Enhanced Zeeman splitting in Ga0.25In0.75As quantum point contacts

Details Enhanced Zeeman splitting in Ga0.25In0.75As quantum point contacts Enhanced Zeeman splitting in Ga0.25In0.75As quantum point contacts

2008-05-05

arxiv.org/abs/0805.0504v2

Applied Physics Letters 93, 012105 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

[Version 2] Revtex4, 11 pages, 3 figures, accepted for publication in Applied Physics Letters

Scientific paper

10.1063/1.2957033

The strength of the Zeeman splitting induced by an applied magnetic field is an important factor for the realization of spin-resolved transport in mesoscopic devices. We measure the Zeeman splitting for a quantum point contact etched into a Ga0.25In0.75As quantum well, with the field oriented parallel to the transport direction. We observe an enhancement of the Lande g-factor from |g*|=3.8 +/- 0.2 for the third subband to |g*|=5.8 +/- 0.6 for the first subband, six times larger than in GaAs. We report subband spacings in excess of 10 meV, which facilitates quantum transport at higher temperatures.

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