Enhanced shot noise in carbon nanotube field-effect transistors

Details Enhanced shot noise in carbon nanotube field-effect transistors Enhanced shot noise in carbon nanotube field-effect transistors

2010-01-23

arxiv.org/abs/1001.4144v1

Appl. Phys. Lett. 95 (2009) 252108

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

We predict shot noise enhancement in defect-free carbon nanotube field-effect transistors through a numerical investigation based on the self-consistent solution of the Poisson and Schrodinger equations within the non-equilibrium Green functions formalism, and on a Monte Carlo approach to reproduce injection statistics. Noise enhancement is due to the correlation between trapping of holes from the drain into quasi-bound states in the channel and thermionic injection of electrons from the source, and can lead to an appreciable Fano factor of 1.22 at room temperature.

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