Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels

Details Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels

2010-12-15

arxiv.org/abs/1012.3317v1

ACS Nano 5 (2011) 500-506

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Accepted by ACS Nano

Scientific paper

10.1021/nn102346b

Realization of logic circuits in graphene with an energy gap (EG) remains one of the main challenges for graphene electronics. We found that large transport EGs (>100 meV) can be fulfilled in dual-gated bilayer graphene underneath a simple alumina passivation top gate stack, which directly contacts the graphene channels without an inserted buffer layer. With the presence of EGs, the electrical properties of the graphene transistors are significantly enhanced, as manifested by enhanced on/off current ratio, subthreshold slope and current saturation. For the first time, complementary-like semiconducting logic graphene inverters are demonstrated that show a large improvement over their metallic counterparts. This result may open the way for logic applications of gap-engineered graphene.

Affiliated with

Also associated with

No associations

Rating

Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Enhanced Logic Performance with Semiconducting Bilayer Graphene Channels will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-13868