Enhanced annealing effect in an oxygen atmosphere on GaMnAs

Details Enhanced annealing effect in an oxygen atmosphere on GaMnAs Enhanced annealing effect in an oxygen atmosphere on GaMnAs

2004-09-28

arxiv.org/abs/cond-mat/0409720v1

Appl. Phys. Lett. 86 (13), 132501 (2005)

Physics

Condensed Matter

Strongly Correlated Electrons

3 pages, 3 figures

Scientific paper

10.1063/1.1886912

We report on in-situ resistivity measurements on GaMnAs during post-growth annealing in different atmospheres. A drop in the resistivity is observed when the GaMnAs is exposed to oxygen, which indicates that the passivation of Mn interstitials (Mn_I) at the free surface occurs through oxidation. The presence of oxygen can therefore be an important annealing condition for the optimization of GaMnAs thin films, all the more since the oxidation appears to be limited to the sample surface. Annealing in an oxygen-free atmosphere leads to an increase in the resistivity indicating a second annealing mechanism besides the out-diffusion of Mn_I. According to our magnetization and Hall effect data, this mechanism reduces the amount of magnetically and electrically active Mn atoms.

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