Energy Transport between Hole Gas and Crystal Lattice in Diluted Magnetic Semiconductor

Details Energy Transport between Hole Gas and Crystal Lattice in Diluted Magnetic Semiconductor Energy Transport between Hole Gas and Crystal Lattice in Diluted Magnetic Semiconductor

2006-11-28

arxiv.org/abs/cond-mat/0611704v1

Physics

Condensed Matter

Materials Science

To appear in the Proceedings of ICPS28th (Vienna, Austria, July 24-28, 2006)

Scientific paper

10.1063/1.2730349

The temperature dependent energy transfer rate between charge carriers and
lattice has been experimentally investigated in ferromagnetic semiconductors.
Studied 100 nm thick low-temperature MBE grown Mn_{x}Ga_{1-x}As samples had
manganese concentrations x=3.7 % and 4.0 %. Curie temperatures estimated from
temperatures of peak resistivities were 60 K and 62 K, respectively.

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