Energy-resolved electron-spin dynamics at surfaces of p-doped GaAs

Details Energy-resolved electron-spin dynamics at surfaces of p-doped GaAs Energy-resolved electron-spin dynamics at surfaces of p-doped GaAs

2005-08-25

arxiv.org/abs/cond-mat/0508601v1

Physics

Condensed Matter

Materials Science

6 pages, 4 figures

Scientific paper

Electron-spin relaxation at different surfaces of p-doped GaAs is investigated by means of spin, time and energy resolved 2-photon photoemission. These results are contrasted with bulk results obtained by time-resolved Faraday rotation measurements as well as calculations of the Bir-Aronov-Pikus spin-flip mechanism. Due to the reduced hole density in the band bending region at the (100) surface the spin-relaxation time increases over two orders of magnitude towards lower energies. At the flat-band (011) surface a constant spin relaxation time in agreement with our measurements and calculations for bulk GaAs is obtained.

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