Energy resolution ΔE=12 eV at 5.9 keV for lead absorber coupled to a single Al-STJ via phonons

Details Energy resolution ΔE=12 eV at 5.9 keV for lead absorber coupled to a single Al-STJ via phonons Energy resolution ΔE=12 eV at 5.9 keV for lead absorber coupled to a single Al-STJ via phonons

Feb 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002aipc..605...23a&link_type=abstract

LOW TEMPERATURE DETECTORS: Ninth International Workshop on Low Temperature Detectors. AIP Conference Proceedings, Volume 605, p

Physics

1

Superconducting Optical, X-Ray, And Gamma-Ray Detectors, X- And Gamma-Ray Sources, Mirrors, Gratings, And Detectors

Scientific paper

An energy resolution of ΔE=12 eV (FWHM) has been measured for the 55Mn Kα1-line (E=5.9 keV) using a superconducting lead absorber (90×90×1.3 μm3) read out by a single aluminum superconducting tunnel junction (100×100 μm2). The total electronic noise contribution was measured as ΔEelec=4 eV (FWHM). The superconducting tunnel junction is located on a Si3N4-membrane of thickness 0.3 μm, the lead absorber is separated from the superconducting tunnel junction's top layer by a thin layer of natural aluminum oxide. .

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