Energy gap tuning in graphene on hexagonal boron nitride bilayer system

Details Energy gap tuning in graphene on hexagonal boron nitride bilayer system Energy gap tuning in graphene on hexagonal boron nitride bilayer system

2010-02-08

arxiv.org/abs/1002.1697v1

Phys. Rev. B 81, 155433 (2010)

Physics

Condensed Matter

Materials Science

10 pages, 7 figures, submitted to Physical Review B

Scientific paper

10.1103/PhysRevB.81.155433

We use a tight binding approach and density functional theory calculations to study the band structure of graphene/hexagonal boron nitride bilayer system in the most stable configuration. We show that an electric field applied in the direction perpendicular to the layers significantly modifies the electronic structure of the whole system, including shifts, anticrossing and other deformations of bands, which can allow to control the value of the energy gap. It is shown that band structure of biased system may be tailored for specific requirements of nanoelectronics applications. The carriers' mobilities are expected to be higher than in the bilayer graphene devices.

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