Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

Details Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

2011-11-15

arxiv.org/abs/1111.3683v1

Nano Lett., 2011, 11 (11), pp 4520--4526

Physics

Condensed Matter

Materials Science

Scientific paper

10.1021/nl202434k

We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimension and position of each floating gate are well defined and controlled. The devices exhibit a long retention time and single-electron injection at room temperature.

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