Endotaxial Si nanolines in Si(001):H

Details Endotaxial Si nanolines in Si(001):H Endotaxial Si nanolines in Si(001):H

2011-03-16

arxiv.org/abs/1103.3142v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 6 figures

Scientific paper

We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the H-terminated silicon (001) surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect free endotaxial structure of huge aspect ratio; it can grow micrometre long at a constant width of exactly four Si dimers (1.54nm). Another remarkable property is its capacity to be exposed to air without suffering any degradation. The nanoline grows independently of any step edges at tunable densities, from isolated nanolines to a dense array of nanolines. In addition to these unique structural characteristics, scanning tunnelling microscopy and density functional theory reveal a one-dimensional state confined along the Haiku core. This nanoline is a promising candidate for the long sought after electronic solid-state one-dimensional model system to explore the fascinating quantum properties emerging in such reduced dimensionality.

Affiliated with

Also associated with

No associations

Rating

Endotaxial Si nanolines in Si(001):H does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Endotaxial Si nanolines in Si(001):H, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Endotaxial Si nanolines in Si(001):H will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-262827