Ellipsometric study of the Electronic Structure of GaMnAs and LT-GaAs

Details Ellipsometric study of the Electronic Structure of GaMnAs and LT-GaAs Ellipsometric study of the Electronic Structure of GaMnAs and LT-GaAs

2004-04-13

arxiv.org/abs/cond-mat/0404304v1

Phys. Rev. B 70, 205208 (2004)

Physics

Condensed Matter

Materials Science

21 pages, 8 figures

Scientific paper

10.1103/PhysRevB.70.205208

We have measured the optical constants of GaMnAs from 0.62 eV to 6 eV, using spectroscopic ellipsometry. The second derivatives of the dielectric function are examined through a critical point analysis. The E1 critical point shifts to higher energies with increased doping of Mn, while all other critical points appear unaffected. The evolution of the critical points results from the interplay between band gap renormalization from ionized impurities and sp-d hybridization of the Mn induced impurity band and GaAs valence and conductions bands.

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