Electrostatically defined Quantum Dots in a Si/SiGe Heterostructure

Details Electrostatically defined Quantum Dots in a Si/SiGe Heterostructure Electrostatically defined Quantum Dots in a Si/SiGe Heterostructure

2010-07-14

arxiv.org/abs/1007.2404v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

20 pages, 8 figures

Scientific paper

We present an electrostatically defined few-electron double quantum dot (QD) realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport and charge spectroscopy with an additional QD as well as pulsed-gate measurements are demonstrated. We discuss technological challenges specific for silicon-based heterostructures and the effect of a comparably large effective electron mass on transport properties and tunability of the double QD. Charge noise, which might be intrinsically induced due to strain-engineering is proven not to affect the stable operation of our device as a spin qubit. Our results promise the suitability of electrostatically defined QDs in Si/SiGe heterostructures for quantum information processing.

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