Electrostatically actuated silicon-based nanomechanical switch at room temperature

Details Electrostatically actuated silicon-based nanomechanical switch at room temperature Electrostatically actuated silicon-based nanomechanical switch at room temperature

2009-03-13

arxiv.org/abs/0903.2491v1

Appl. Phys. Lett. 93, 033515 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 3 figures. Related papers can be found at http://nano.bu.edu/

Scientific paper

10.1063/1.2964196

We demonstrate a silicon-based high frequency nanomechanical device capable of switching controllably between two states at room temperature. The device uses a nanomechanical resonator with two distinct states in the hysteretic nonlinear regime. In contrast to prior work, we demonstrate room temperature electrostatic actuation and sensing of the switching device with 100% fidelity by phase modulating the drive signal. This phase-modulated device can be used as a low-power high-speed mechanical switch integrated on-chip with silicon circuitry.

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