Electrostatic doping of graphene through ultrathin hexagonal boron nitride films

Details Electrostatic doping of graphene through ultrathin hexagonal boron nitride films Electrostatic doping of graphene through ultrathin hexagonal boron nitride films

2011-11-10

arxiv.org/abs/1111.2459v1

Nano Lett., 2011, 11 (11), pp 4631-4635

Physics

Condensed Matter

Materials Science

5 pages, 4 figures

Scientific paper

10.1021/nl202131q

When combined with graphene, hexagonal boron nitride (h-BN) is an ideal substrate and gate dielectric with which to build metalh-BN|graphene field-effect devices. We use first-principles density functional theory (DFT) calculations for Cu|h-BN|graphene stacks to study how the graphene doping depends on the thickness of the h-BN layer and on a potential difference applied between Cu and graphene. We develop an analytical model that describes the doping very well, allowing us to identify the key parameters that govern the device behaviour. A predicted intrinsic doping of graphene is particularly prominent for ultrathin h-BN layers and should be observable in experiment. It is dominated by novel interface terms that we evaluate from DFT calculations for the individual materials and for interfaces between h-BN and Cu or graphene.

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