Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces

Details Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces

2011-11-20

arxiv.org/abs/1111.4684v1

Physics

Condensed Matter

Materials Science

The article has been accepted by Applied Physics Letters. After it is published, it will be found at http://apl.aip.org/

Scientific paper

Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO3, and the band insulator SrTiO3 are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately 1/2 electron per surface unit cell at each GdTiO3/SrTiO3 interface. The sheet carrier densities in all structures containing more than one unit cell of SrTiO3 are independent of layer thicknesses and growth sequences, indicating that the mobile carriers are in a high concentration, two-dimensional electron gas bound to the interface. These carrier densities closely meet the electrostatic requirements for compensating the fixed charge at these polar interfaces. Based on the experimental results, insights into interfacial band alignments, charge distribution and the influence of different electrostatic boundary conditions are obtained.

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