Electrostatic- and Parallel Magnetic Field- Tuned Two Dimensional Superconductor-Insulator Transitions

Details Electrostatic- and Parallel Magnetic Field- Tuned Two Dimensional Superconductor-Insulator Transitions Electrostatic- and Parallel Magnetic Field- Tuned Two Dimensional Superconductor-Insulator Transitions

2005-12-29

arxiv.org/abs/cond-mat/0512704v1

Physics

Condensed Matter

Superconductivity

About 11 pages, with 14 figures. To be submitted to Phys Rev B

Scientific paper

10.1103/PhysRevB.73.174527

The 2D superconductor-insulator transition in disordered ultrathin amorphous bismuth films has been tuned both by electrostatic electron doping using the electric field effect and by the application of parallel magnetic fields. Electrostatic doping was carried out in both zero and nonzero magnetic fields, and magnetic tuning was conducted at multiple strengths of electrostatically induced superconductivity. The transitions were analyzed using finite size scaling with critical exponent products nu*z = 0.65-0.7. The parallel critical magnetic field increased with electron transfer as (dn_c-dn)^0.33, where dn is the electron transfer and dn_c is its critical value, and the critical resistance decreased linearly with dn. However at lower temperatures, in the insulating regime, the resistance became larger than expected from extrapolation of its temperature dependence at higher temperatures, and scaling failed. These observations imply that although the electrostatic- and parallel magnetic field- tuned superconductor-insulator transitions would appear to belong to the same universality class and to be delineated by a robust phase boundary that can be crossed either by tuning electron density or magnetic field, in the case of the field-tuned transition at the lowest temperatures, some different type of physical behavior turns on in the insulating regime.

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