Physics – Condensed Matter – Materials Science
Scientific paper
2008-08-21
Appl. Phys. Lett. 93, 112113 (2008)
Physics
Condensed Matter
Materials Science
Scientific paper
10.1063/1.2981802
We investigate carrier transport in a single 22 nm-thick double-gated Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage window. When the gate voltage asymmetry is not too large only either electrons or holes occupy the Si well and the Hall mobility shows the fingerprints of volume inversion/accumulation. At strongly asymmetric double-gate voltage an electric field induced electron-hole (EH) bi-layer is formed inside the well. The EH drag resistance R_{he} is explored at balanced carrier densities: R_{he} decreases monotonically from 860 to 37 Ohms when the electron and hole density is varied between ~0.4-1.7x10^{16} m^{-2}.
Ahopelto Jouni
Kivioja Jani M.
Laakso S. J.
Prunnila Mika
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