Electronic transport properties through thiophenes on switchable domains

Details Electronic transport properties through thiophenes on switchable domains Electronic transport properties through thiophenes on switchable domains

2009-09-11

arxiv.org/abs/0909.2240v2

Phys. Rev. B 81, 115401-1-7 (2010)

Physics

Condensed Matter

Materials Science

Scientific paper

The electronic transport of electrons and holes through stacks of $\alpha$,$\ome ga$-dicyano-$\beta$,$\beta$'-dibutyl- quaterthiophene (DCNDBQT) as part of a nov el organic ferroic field-effect transistor (OFFET) is investigated. The novel ap plication of a ferroelectric instead of a dielectric substrate provides the poss ibility to switch bit-wise the ferroelectric domains and to employ the polarizat ion of these domains as a gate field in an organic semiconductor. A device conta ining very thin DCNDBQT films of around 20 nm thickness is intended to be suitab le for logical as well as optical applications. We investigate the device proper ties with the help of a phenomenological model called multilayer organic light-e mitting diodes (MOLED), which was extended to transverse fields. The results sho wed, that space charge and image charge effects play a crucial role in these org anic devices.

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