Electronic Transport Properties of the Ising Quantum Hall Ferromagnet in a Si Quantum Well

Details Electronic Transport Properties of the Ising Quantum Hall Ferromagnet in a Si Quantum Well Electronic Transport Properties of the Ising Quantum Hall Ferromagnet in a Si Quantum Well

2008-02-26

arxiv.org/abs/0802.3756v2

Phys. Rev. Lett. 101, 016805 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.101.016805

Magnetotransport properties are investigated for a high mobility Si two dimensional electron systems in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large hysteresis which is attributed to Ising quantum Hall ferromagnetism. The peak is split into two peaks in the paramagnetic regime. A mean field calculation for the peak positions indicates that electron scattering is strong when the pseudospin is partially polarized. We also study the current-voltage characteristics which exhibit a wide voltage plateau.

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