Electronic transport properties of a tilted graphene pn junction

Details Electronic transport properties of a tilted graphene pn junction Electronic transport properties of a tilted graphene pn junction

2009-05-05

arxiv.org/abs/0905.0710v2

Phys. Rev. B 80, 155406 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 7 figures

Scientific paper

10.1103/PhysRevB.80.155406

Spatial manipulation of current flow in graphene could be achieved through the use of a tilted pn junction. We show through numerical simulation that a pseudo-Hall effect (i.e. non-equilibrium charge and current density accumulating along one of the sides of a graphene ribbon) can be observed under these conditions. The tilt angle and the pn transition length are two key parameters in tuning the strength of this effect. This phenomenon can be explained using classical trajectory via ray analysis, and is therefore relatively robust against disorder. Lastly, we propose and simulate a three terminal device that allows direct experimental access to the proposed effect.

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