Electronic transport in two dimensional graphene

Details Electronic transport in two dimensional graphene Electronic transport in two dimensional graphene

2010-03-24

arxiv.org/abs/1003.4731v2

Rev. Mod. Phys. 83, 407 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Final version as accepted for publication in Reviews of Modern Physics (in press), 69 pages with 38 figures

Scientific paper

10.1103/RevModPhys.83.407

We provide a broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature dependent carrier transport in doped or gated graphene structures. A salient feature of our review is a critical comparison between carrier transport in graphene and in two-dimensional semiconductor systems (e.g. heterostructures, quantum wells, inversion layers) so that the unique features of graphene electronic properties arising from its gap- less, massless, chiral Dirac spectrum are highlighted. Experiment and theory as well as quantum and semi-classical transport are discussed in a synergistic manner in order to provide a unified and comprehensive perspective. Although the emphasis of the review is on those aspects of graphene transport where reasonable consensus exists in the literature, open questions are discussed as well. Various physical mechanisms controlling transport are described in depth including long- range charged impurity scattering, screening, short-range defect scattering, phonon scattering, many-body effects, Klein tunneling, minimum conductivity at the Dirac point, electron-hole puddle formation, p-n junctions, localization, percolation, quantum-classical crossover, midgap states, quantum Hall effects, and other phenomena.

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