Electronic Transport in Dual-gated Bilayer Graphene at Large Displacement Fields

Details Electronic Transport in Dual-gated Bilayer Graphene at Large Displacement Fields Electronic Transport in Dual-gated Bilayer Graphene at Large Displacement Fields

2010-09-03

arxiv.org/abs/1009.0714v1

Phys. Rev. Lett. 105, 166601 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1103/PhysRevLett.105.166601

We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a function of displacement field and density, accompanied by a strong non-linear behavior in the transport characteristics. The effective transport gap is typically two orders of magnitude smaller than the optical band gaps reported by infrared spectroscopy studies. Detailed temperature dependence measurements shed light on the different transport mechanisms in different temperature regimes.

Affiliated with

Also associated with

No associations

Rating

Electronic Transport in Dual-gated Bilayer Graphene at Large Displacement Fields does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Electronic Transport in Dual-gated Bilayer Graphene at Large Displacement Fields, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electronic Transport in Dual-gated Bilayer Graphene at Large Displacement Fields will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-685167