Electronic Structures of Fe$_{3-x}V$_x$Si Probed by Photoemission Spectroscopy

Details Electronic Structures of Fe$_{3-x}V$_x$Si Probed by Photoemission Spectroscopy Electronic Structures of Fe$_{3-x}V$_x$Si Probed by Photoemission Spectroscopy

2008-04-17

arxiv.org/abs/0804.2712v1

phys. stat. sol. (a) 203, No. 11, 2765 (2006)

Physics

Condensed Matter

Materials Science

4 pages, 5 figures, 5 references

Scientific paper

10.1002/pssa.200669648

The electronic structures of the Heusler type compounds Fe$_{3-x}V$_x$Si in the concentration range between x = 0 and x = 1 have been probed by photoemission spectroscopy (PES). The observed shift of Si 2p core- level and the main valence band structres indicate a chemical potential shift to higher energy with increasing x. It is also clarified that the density of state at Fermi edge is owing to the collaboration of V 3d and Fe 3d derived states. Besides the decrease of the spectral intensity near Fermi edge with increasing x suggests the formation of pseudo gap at large x.

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