Electronic structures of defective BN nanotubes under transverse electric fields

Details Electronic structures of defective BN nanotubes under transverse electric fields Electronic structures of defective BN nanotubes under transverse electric fields

2008-04-14

arxiv.org/abs/0804.2171v1

Journal of Physical Chemistry C 112, 8424-8428 (2008)

Physics

Condensed Matter

Materials Science

Scientific paper

We investigate the electronic structures of some defective boron nitride nanotubes (BNNTs) under transverse electric fields within density-functional theory. (16,0) BNNTs with antisite, carbon substitution, single vacancy, and Stone-Wales 5775 defects are studied. Under transverse electric fields, the band gaps of the defective BNNTs are reduced, similar to the pristine ones. The energy levels of the defect states vary with the transverse electric field directions, due to the different electrostatic potential shift at the defect sites induced by the electric fields. Therefore, besides electronic structure and optical property engineering, the transverse electric field can be used to identify the defect positions in BNNTs.

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