Electronic structure of the Mott insulator LaVO3 in a quantum well geometry

Details Electronic structure of the Mott insulator LaVO3 in a quantum well geometry Electronic structure of the Mott insulator LaVO3 in a quantum well geometry

2006-07-21

arxiv.org/abs/cond-mat/0607547v1

Appl. Phys. Lett. 89, 251916 (2006)

Physics

Condensed Matter

Materials Science

11 pages, 4 figures

Scientific paper

We used x-ray photoemission spectroscopy to investigate the electronic structure of the Mott insulator LaVO3 embedded in LaAlO3. By limiting the upper layer of LaAlO3 to 3 unit cells, the underlying LaVO3 could be probed. The V 2p core-level spectra had both V3+ and V4+ components, and above 2 unit cell thick LaVO3, the structures exhibited spectra similar to bulk samples. The atomically flat surfaces enabled study of the emission angle dependence, which indicates the V4+ is localized to the topmost layer. These results demonstrate the potential for probing interface electronic structure in oxide ultrathin films by surface spectroscopy.

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