Electronic structure of intentionally disordered AlAs/GaAs superlattices

Details Electronic structure of intentionally disordered AlAs/GaAs superlattices Electronic structure of intentionally disordered AlAs/GaAs superlattices

1995-01-23

arxiv.org/abs/mtrl-th/9501004v2

Physics

Condensed Matter

Materials Science

10 pages, REVTeX and EPSF macros, 4 figures in postscript. e-mail to mader@cecam.fr

Scientific paper

10.1103/PhysRevLett.74.2555

We use realistic pseudopotentials and a plane-wave basis to study the electronic structure of non-periodic, three-dimensional, 2000-atom (AlAs)_n/(GaAs)_m (001) superlattices, where the individual layer thicknesses n,m = {1,2,3} are randomly selected. We find that while the band gap of the equivalent (n = m = 2) ordered superlattice is indirect, random fluctuations in layer thicknesses lead to a direct gap in the planar Brillouin zone, strong wavefunction localization along the growth direction, short radiative lifetimes, and a significant band-gap reduction, in agreement with experiments on such intentionally grown disordered superlattices.

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