Electronic structure of In$_{1-x}$Mn$_x$As studied by photoemission spectroscopy: Comparison with Ga$_{1-x}$Mn$_x$As

Details Electronic structure of In$_{1-x}$Mn$_x$As studied by photoemission spectroscopy: Comparison with Ga$_{1-x}$Mn$_x$As Electronic structure of In$_{1-x}$Mn$_x$As studied by photoemission spectroscopy: Comparison with Ga$_{1-x}$Mn$_x$As

2002-03-04

arxiv.org/abs/cond-mat/0203056v1

Physical Review B 65, 161203 (R) (2002).

Physics

Condensed Matter

Materials Science

4 pages, 3 figures

Scientific paper

10.1103/PhysRevB.65.161203

We have investigated the electronic structure of the $p$-type diluted magnetic semiconductor In$_{1-x}$Mn$_x$As by photoemission spectroscopy. The Mn 3$d$ partial density of states is found to be basically similar to that of Ga$_{1-x}$Mn$_x$As. However, the impurity-band like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga$_{1-x}$Mn$_x$As. This difference would explain the difference in transport, magnetic and optical properties of In$_{1-x}$Mn$_x$As and Ga$_{1-x}$Mn$_x$As. The different electronic structures are attributed to the weaker Mn 3$d$ - As 4$p$ hybridization in In$_{1-x}$Mn$_x$As than in Ga$_{1-x}$Mn$_x$As.

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