Electronic structure of graphite/6H-SiC interfaces

Details Electronic structure of graphite/6H-SiC interfaces Electronic structure of graphite/6H-SiC interfaces

2006-10-09

arxiv.org/abs/cond-mat/0610220v1

Physics

Condensed Matter

Materials Science

6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006, Newcastle upon Tyne, UK, September 3rd - 7th, 2

Scientific paper

We have studied the electronic structure of the interface between 6H-SiC{0001} and graphite. On n-type and p-type 6H-SiC(0001) we observe Schottky barriers of Phi_b,n^Si= 0.3+-0.1eV and Phi_b,p^Si=2.7+-0.1eV, respectively. The observed barrier is face specific: on n-type 6H-SiC(000-1) we find Phi_b,n^C=1.3+-0.1eV. The impact of these barriers on the electrical properties of metal/SiC contacts is discussed.

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