Physics – Condensed Matter – Materials Science
Scientific paper
2002-07-31
Physics
Condensed Matter
Materials Science
3 pages, physica status solidi (Rapid Research Notes), in press
Scientific paper
The local electronic structure of N atoms in a diluted GaAs1-xNx (x=3%) alloy, in view of applications in optoelectronics, is determined for the first time using soft-X-ray absorption (SXA) and emission (SXE). Deviations from crystalline GaN, in particular in the conduction band, are dramatic. Employing the orbital character and elemental specificity of the SXE/SXA spectroscopies, we identify a charge transfer from the N atoms at the valence band maximum, reducing the overlap with the wavefunction in conduction band minimum, as the main factor limiting the optical efficiency of GaAs1-xNx alloys. Moreover, a k-conserving process of resonant inelastic x-ray scattering involving the L1 derived valence and conduction states is discovered.
Alferov Zh. I.
Augustsson A.
Claessen Ralph
Debowska-Nilsson D.
Egorov Yu. A.
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