Electronic Structure of Fibonacci Si Delta-Doped Gaas

Details Electronic Structure of Fibonacci Si Delta-Doped Gaas Electronic Structure of Fibonacci Si Delta-Doped Gaas

1994-09-16

arxiv.org/abs/cond-mat/9409073v1

Physics

Condensed Matter

to appear in Phys. Lett. A. 9 pages in REXTeX style. 6 figures by fax on request to E. Macia (fimat04@emducms1.sis.ucm.es). FM

Scientific paper

We study the electronic structure of a new type of Fibonacci superlattice based on Si $\delta$-doped GaAs. Assuming that $\delta$-doped layers are equally spaced, quasiperiodicity is introduced by selecting two different donor concentrations and arranging them according to the Fibonacci series along the growth direction. The one-electron potential due to $\delta$-doping is obtained by means of the Thomas-Fermi approach. The resulting energy spectrum is then found by solving the corresponding effective-mass wave equation. We find that a self-similar spectrum can be seen in the band structure. Electronic transport properties of samples are also discussed and related to the degree of spatial localization of electronic envelope-functions.

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